The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocati...

Germanium is a semiconductor material that formed the basis for the development of transistor tec...

Following their first observation in small area silicon MOSFETs in 1984, random telegraph signals...

This book provides a unique review of various aspects of metallic contamination in Si and Ge-base...

CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS p...

This book provides a unique review of various aspects of metallic contamination in Si and Ge-base...

The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocati...

The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocati...

Germanium is a semiconductor material that formed the basis for the development of transistor ...

CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art...

This book provides a unique review of various aspects of metallic contamination in Si and Ge-base...

As semiconductor devices move to the nanoscale, random telegraph signals have become an issue of ...