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Stability of IGZO-based Thin-Film Transistor
Stability and Temperature-Dependence Assessment of IGZO TFTs
Paperback
Print on Demand | Lieferzeit: Print on Demand - Lieferbar innerhalb von 3-5 Werktagen I
Artikel-Nr:
9783838399638
Veröffentl:
2010
Einband:
Paperback
Erscheinungsdatum:
07.09.2010
Seiten:
152
Autor:
Ken Hoshino
Gewicht:
244 g
Format:
220x150x10 mm
Sprache:
Englisch
Beschreibung:
Ken Hoshino received the B.S. degree in electrical engineering in 1999 from Chuo University in Tokyo, Japan and M.S. degree in 2008 from Oregon State University, U.S.A. From 1999 to 2005, he worked for Rohm Co., Ltd. as a circuit design engineer.
Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.