Semiconductors

In the New Series of Landolt-Bomstein the eleven volumes III/17a***i and III/22a,b present data on the properties of semiconductors on more than 6 000 pages with tables and (about 10 000) figures. The aim of the Series "e;Data in Science and Technology"e; is to built a bridge between the libraries, where such comprehensive handbooks are situated, and the laboratory. The first volume of this series, published in 1991, contains data on the most important groups of semiconductors, the group IV elements and the III-V compounds. From the wealth of data in the tables and figures of the Landolt-Bornstein volumes III/17a and III/22a,b about 10% were condensed into this first volume. It seemed not appropriate to condense to the same extent all the other material of the remaining nine subvolumes into several further DST volumes. Instead of it all remaining data have been put into the present volume. To do this some severe restrictions became necessary. They are explained in the Introduction, and the reader is asked to read it before using this book. I would further like to focus the attention of the reader on chapter 8, where the bridge between this DST volume and the LB sources is built by cross-references between both books. I do hope that this volume meets the needs of the physical community as a quick reference to basic semiconductor data and an access to the larger data collections on this field of physics.

In the New Series of Landolt-Bomstein the eleven volumes III/17a***i and III/22a,b present data on the properties of semiconductors on more than 6 000 pages with tables and (about 10 000) figures. The aim of the Series "e;Data in Science and Technology"e; is to built a bridge between the libraries, where such comprehensive handbooks are situated, and the laboratory. The first volume of this series, published in 1991, contains data on the most important groups of semiconductors, the group IV elements and the III-V compounds. From the wealth of data in the tables and figures of the Landolt-Bornstein volumes III/17a and III/22a,b about 10% were condensed into this first volume. It seemed not appropriate to condense to the same extent all the other material of the remaining nine subvolumes into several further DST volumes. Instead of it all remaining data have been put into the present volume. To do this some severe restrictions became necessary. They are explained in the Introduction, and the reader is asked to read it before using this book. I would further like to focus the attention of the reader on chapter 8, where the bridge between this DST volume and the LB sources is built by cross-references between both books. I do hope that this volume meets the needs of the physical community as a quick reference to basic semiconductor data and an access to the larger data collections on this field of physics.