Probing the kinetics of Ga/Si interfaces

Author's vita: Dr. Praveen Kumar, INSPIRE Faculty, CSIR-CSIO, Chandigarh, India. Ms. Pooja Devi, Scientist, CSIR-CSIO, Chandigarh, India. Dr. Mahesh Kumar, Scientist, CSIR-NPL, Delhi, India. Prof. S. M. Shivaprasad, ICMS, JNCASR, Bangalore, India.

This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces.