Springer Handbook of Crystal Growth

Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Table of Contents   Part A: Fundamentals of Crystal Growth and Defect Formation Chap. 1. Crystal Growth Techniques and Characterization (G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley) Chap. 2. Nucleation at Surfaces, (I. Markov) Chap. 3. Morphology of Crystals Grown from Solution (F. Abbona, D. Aquilano) Chap. 4. Generation and Propagation of Defects During Crystal Growth (H. Klapper) Chap. 5. Single Crystals Grown Under Unconstrained Conditions (I. Sunagawa)  Part B: Crystal Growth from Melt Techniques Chap. 6. Defect Formation During Crystal Growth from the Melt (P. Rudolph) Chap. 7. Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields (D. Bliss) Chap. 8.Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications (K. Kakimoto) Chap. 9.Czochralski Growth of Oxide Photorefractive Crystals (E. Dieguez, J.L.Plaza, M. D. Aggarwal, A. K. Batra) Chap. 10. Bulk Crystal Growth of Ternary III–V Semiconductors (P.S. Dutta) Chap. 11. Growth/Characterization of Antimony-Based Narrow-Bandgap III–V Semiconductor Crystals (V.K. Dixit, H. L. Bhat) Chap. 12. Crystal Growth of Oxides by Optical Floating Zone Technique (H. Dabkowska, A. Dabkowski) Chap. 13. Laser-Heated Pedestal Growth of Oxide Fibers (M.R.B. Andreeta, C. Hernandes) Chap. 14. Synthesis of Refractory Materials by Skull Melting Technique (V.V. Osiko, M.A. Borik, E.E. Lomonova) Chap. 15. Crystal Growth of Laser Host Fluorides and Oxides (J. Xu, H. Li) Chap. 16. Shaped Crystal Growth (V. Tatartchenko)   Part C: Solution Growth of Crystals Chap. 17. Bulk Single Crystals Grown from Solution on Earth and in Microgravity (M. Aggarwal, A. Batra, R. Lal, B. Penn, D. Frazier) Chap. 18. Hydrothermal Growth of Polyscale Crystals (K. Byrappa)Chap. 19. Hydrothermal and Ammonothermal Growth of ZnO and GaN (M.Callahan, Q.S. Chen) Chap. 20. Stoichiometry and Domain Structure of KTP-Type Nonlinear Optical Crystals (M. Roth) Chap. 21. High-Temperature Solution Growth: Application to Laser and NL Optical Crystals (J.J. Carvajal, M.C. Pujol, F. Díaz) Chap. 22. Growth and Characterization of KDP and its Analogs (S.-L. Wang, X. Sun, X.-T. Tao)   Part D: Crystal Growth from Vapor Chap. 23. Growth and Characterization of Silicon Carbide Crystals (G. Dhanaraj, B. Raghothamachar, M. Dudley) Chap. 24. AlN Bulk Crystal Growth by Physical Vapor Transport (R. Dalmau, Z. Sitar) Chap. 25. Growth of Single-Crystal Organic Semiconductors (C. Kloc, T. Siegrist, J. Pflaum) Chap. 26. Growth of III-Nitrides with HVPE (C. Hemmingsson, B. Monemar, Y. Kumagai, A. Koukitu) Chap. 27. Growth of Semiconductor Single Crystals from Vapor Phase (R. Dhanasekaran)   Part E: Epitaxial Growth and Thin Films Chap. 28. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition (I.B. Bhat) Chap. 29. Liquid-Phase Electroepitaxy of Semiconductors (S. Dost) Chap. 30. Epitaxial Lateral Overgrowth of Semiconductors (Z. R. Zytkiewicz) Chap. 31. Liquid-Phase Epitaxy of Advanced Materials (C.F. Klemenz Rivenbark) Chap. 32. Molecular-Beam Epitaxial Growth of HgCdTe (J.W. Garland, S. Sivananthan) Chap. 33. Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots (U. Pohl) Chap. 34. Formation of SiGe Heterostructures and Their Properties (Y. Shiraki, A. Sakai) Chap. 35. Plasma Energetics in Pulsed Laser and Pulsed Electron Deposition (M. Strikovski, J. Kim, S. Kolagani)   Part F: Modeling of Crystal Growth and Defects Chap. 36. Convection and Control in Melt Growth of Bulk Crystals (C.-W. Lan) Chap. 37. Vapor Growth of III Nitrides (D. Cai, L. Zheng, H. Zhang)Chap. 38. Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon