Heterojunction Bipolar Transistors for Circuit Design

A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors* Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs* Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning* Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design* Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

ContentsAbout the Author ixPreface xiAcknowledgments xiiiAcknowledgments (list of sources) xvNomenclature xvii1 Introduction 11.1 Overview of Heterojunction Bipolar Transistors 11.2 Modeling and Measurement for HBT 51.3 Organization of This Book 7References 72 Basic Concept of Microwave Device Modeling 92.1 Signal Parameters 102.1.1 Low-Frequency Parameters 112.1.2 S-Parameters 162.2 Representation of Noisy Two-Port Network 212.2.1 Noise Matrix 212.2.2 Noise Parameters 242.3 Basic Circuit Elements 252.3.1 Resistance 252.3.2 Capacitance 262.3.3 Inductance 292.3.4 Controlled Sources 312.3.5 Ideal Transmission Line 342.4 pi- and T-Type Networks 372.4.1 T-Type Network 372.4.2 pi-Type Network 392.4.3 Relationship between pi- and T-Type Networks 402.5 Deembedding Method 432.5.1 Parallel Deembedding 432.5.2 Series Deembedding 442.5.3 Cascading Deembedding 452.6 Basic Methods of Parameter Extraction 462.6.1 Determination of Capacitance 462.6.2 Determination of Inductance 472.6.3 Determination of Resistance 492.7 Summary 50References 503 Modeling and Parameter Extraction Methods of Bipolar Junction Transistor 513.1 PN Junction 523.2 PN Junction Diode 553.2.1 Basic Concept 553.2.2 Equivalent Circuit Model 593.2.3 Determination of Model Parameters 653.3 BJT Physical Operation 673.3.1 Device Structure 683.3.2 The Modes of Operation 703.3.3 Base-Width Modulation 753.3.4 High Injection and Current Crowding 773.4 Equivalent Circuit Model 783.4.1 E-M Model 783.4.2 G-P Model 833.4.3 Noise Model 863.5 Microwave Performance 873.5.1 Transition Frequency 883.5.2 Common-Emitter Configuration 903.5.3 Common-Base Configuration 913.5.4 Common-Collector Configuration 923.5.5 Summary and Comparisons 933.6 Summary 94References 944 Basic Principle of HBT 954.1 Semiconductor Heterojunction 964.2 HBT Device 1014.2.1 GaAs HBT 1024.2.2 InP HBT 1104.3 Summary 115References 1155 Small-Signal Modeling and Parameter Extraction of HBT 1175.1 Small-Signal Circuit Model 1185.1.1 Pad Structure 1185.1.2 T-Type Circuit Model 1205.1.3 pi-Type Circuit Model 1225.1.4 Unilateral Power Gain 1245.1.5 fT and fmax 1265.2 HBT Device Structure 1275.3 Extraction Method of PAD Capacitances 1285.3.1 Open Test Structure Method 1285.3.2 Pinch-Off Method 1295.4 Extraction Method of Extrinsic Inductances 1325.4.1 Short Test Structure Method 1325.4.2 Open-Collector Method 1345.5 Extraction Method of Extrinsic Resistance 1375.5.1 Z Parameter Method 1375.5.2 Cold-HBT Method 1385.5.3 Open-Collector Method 1435.6 Extraction Method of Intrinsic Resistance 1465.6.1 Direct Extraction Method 1465.6.2 Hybrid Method 1545.7 Semianalysis Method 1595.8 Summary 163References 1666 Large-Signal Equivalent Circuit Modeling of HBT 1696.1 Linear and Nonlinear 1706.1.1 Definition 1706.1.2 Nonlinear Lumped Elements 1726.2 Large Signal and Small Signal 1776.3 Thermal Resistance 1776.3.1 Definition 1796.3.2 Equivalent Circuit Model 1836.3.3 Determination of Thermal Resistance 1876.4 Nonlinear HBT Modeling 1946.4.1 VBIC Model 1946.4.2 Agilent Model 1976.4.3 Macromodeling Method 2026.5 Summary 204References 2047 Microwave Noise Modeling and Parameter Extraction Technique for HBTs 2077.1 Noise Equivalent Circuit Model 2087.2 Derivation of Noise Parameters 2107.3 Noise Parameter Extraction Methods 2197.3.1 Tuner-Based Extraction Method 2207.3.2 Noise Parameters Based on Noise Figure Measurement 2227.4 Common Base, Emitter, and Collector Configurations 2307.4.1 Signal Parameter Relationships 2317.4.2 Noise Parameter Relationships 2367.5 Summary 243References 2438 SiGe HBT Modeling and Parameter Extraction 2458.1 Introduction 2458.2 Small-Signal Model 2468.3 Large-Signal Model 2518.3.1 HICUM 2518.3.2 MEXTRAM Equivalent Circuit Model 2538.4 Summary 255References 255Index 000