Advances in Multifunctional Materials and Systems II

Contains a collection of papers from the below symposia held during the 10th Pacific Rim Conference on Ceramic and Glass Technology (PacRim10), June 2-7,2013, in Coronado, California 2012:

Preface vii ADVANCES IN ELECTROCERAMICS Pyroelectric Performances of Relaxor-Based Ferroelectric Single Crystals and their Applications in Infrared Detectors 3 Long Li, Haosu Luo, Xiangyong Zhao, Xiaobing Li, Bo Ren, Qing Xu, and Wenning Di Formation of Tough Foundation Layer for Electrical Plating on Insulator using Aerosol Deposition Method of Cu-Al203 Mixed Powder 17 Naoki Seto, Shingo Hirose, Hiroki Tsuda and Jun Akedo Formation and Electromagnetic Properties of 0.1 BTO/0.9NZFO Ceramic Composite with High Density Prepared by Three-Step Sintering Method 23 Bin Xiao, Juncong Wang, Ning Ma, and Piyi Du MICROWAVE MATERIALS AND THEIR APPLICATIONS Thin Glass Characterization in the Radio Frequency Range 37 Alfred Ebberg, Jurgen Meggers, Kai Rathjen, Gerhard Fotheringham, Ivan Ndip, Florian Ohnimus, Christian Tschoban, Isa Pieper, Andreas Kilian, Sebastian Methfessel, Martin Letz, and Ulrich Fotheringham Formation of Silver Nano Particles in Percolative Ag-PbTi03 Composite Dielectric Thin Film 51 Tao Hu, Zongrong Wang, Liwen Tang, Ning Ma, and Piyi Du Software for Calculating Permittivity of Resonators: HakCol & ErCalc 65 Rick Ubic Effects of MgO Additive on Structural, Dielectric Properties and Breakdown Strength of Mg2Ti04 Ceramics Doped with ZnO-B203 Glass 17 Xiaohong Wang, Mengjie Wang, Zhaoqiang Li, and Wenzhong Lu Design of Microwave Dielectrics Based on Crystallography 87 Hitoshi Ohsato OXIDE MATERIALS FOR NONVOLATILE MEMORY TECHNOLOGY AND APPLICATIONS Stable Resistive Switching Characteristics of Al203 Layers Inserted in Hf02 Based RRAM Devices 103 Chun-Yang Huang, Jheng-Hong Jieng, and Tseung-Yuen Tseng Improvement of Resistive Switching Properties of Ti/Zr02/Pt with Embedded Germanium 111 Chun-An Lin, Debashis Panda, and Tseung-Yuen Tseng Nonvolatile Memories Using Single Electron Tunneling Effects in Si Quantum Dots Inside Tunnel Silicon Oxide 117 Ryuji Ohba Resistive Switching and Rectification Characteristics with CoO/Zr02 Double Layers 123 Tsung-Ling Tsai, Jia-Woei Wu, and Tseng-Yuen Tseng Research Of Nano-Scaled Transition Metal Oxide Resistive Non-Volatile Memory (R-RAM) 129 ChiaHua Ho, Cho-Lun Hsu, Chun-Chi Chen, Ming-Taou Lee, Hsin-Hau Huang, Kai-Shin Li, Lu-Mei Lu, Tung-Yen Lai, Wen-Cheng Chiu, Bo-Wei Wu, MeiYi Li, Min-Cheng Chen, Cheng-San Wu, Yi-Ping Hsieh, and Fu-Liang Yang Author Index 137