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Guide to State-Of-The-Art Electron Devices
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Artikel-Nr:
9781118347263
Veröffentl:
2013
Erscheinungsdatum:
22.04.2013
Seiten:
328
Autor:
Joachim N Burghartz
Gewicht:
809 g
Format:
260x183x22 mm
Sprache:
Englisch
Beschreibung:
Edited byProf. Dr. Joachim N. BurghartzInstitute for Microelectronics Stuttgart, Germany
Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications
Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field.
Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society
Contributed by internationally respected members of the electron devices community
A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms
Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered
A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.
Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field.
Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society
Contributed by internationally respected members of the electron devices community
A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms
Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered
A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.
Foreword xi
Preface xiii
Contributors xvii
Acknowledgments xix
Introduction: Historic Timeline xxi
PART I BASIC ELECTRON DEVICES
1 Bipolar Transistors 3
John D. Cressler and Katsuyoshi Washio
1.1 Motivation 3
1.2 The pn Junction and its Electronic Applications 5
1.3 The Bipolar Junction Transistor and its Electronic Applications 10
1.4 Optimization of Bipolar Transistors 15
1.5 Silicon-Germanium Heterojunction Bipolar Transistors 17
References 19
2 MOSFETs 21
Hiroshi Iwai, Simon Min Sze, Yuan Taur and Hei Wong
2.1 Introduction 21
2.2 MOSFET Basics 21
2.3 The Evolution of MOSFETs 27
2.4 Closing Remarks 31
References 31
3 Memory Devices 37
Kinam Kim and Dong Jin Jung
3.1 Introduction 37
3.2 Volatile Memories 39
3.3 Non-Volatile Memories 41
3.4 Future Perspectives of MOS Memories 43
3.5 Closing Remarks 45
References 46
4 Passive Components 49
Joachim N. Burghartz and Colin C. McAndrew
4.1 Discrete and Integrated Passive Components 49
4.2 Application in Analog ICs and DRAM 52
4.3 The Planar Spiral Inductor-A Case Study 54
4.4 Parasitics in Integrated Circuits 57
References 57
5 Emerging Devices 59
Supriyo Bandyopadhyay, Marc Cahay and Avik W. Ghosh
5.1 Non-Charge-Based Switching 59
5.2 Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics 63
5.3 Closing Remarks 66
References 67
PART II ASPECTS OF DEVICE AND IC MANUFACTURING
6 Electronic Materials 71
James C. Sturm, Ken Rim, James S. Harris and Chung-Chih Wu
6.1 Introduction 71
6.2 Silicon Device Technology 71
6.3 Compound Semiconductor Devices 75
6.4 Electronic Displays 79
6.5 Closing Remarks 82
References 83
7 Compact Modeling 85
Colin C. McAndrew and Laurence W. Nagel
7.1 The Role of Compact Models 85
7.2 Bipolar Transistor Compact Modeling 87
7.3 MOS Transistor Compact Modeling 89
7.4 Compact Modeling of Passive Components 92
7.5 Benchmarking and Implementation 94
References 94
8 Technology Computer Aided Design 97
David Esseni, Christoph Jungemann, J urgen Lorenz, Pierpaolo Palestri, Enrico Sangiorgi and Luca Selmi
8.1 Introduction 97
8.2 Drift-Diffusion Model 98
8.3 Microscopic Transport Models 100
8.4 Quantum Transport Models 101
8.5 Process and Equipment Simulation 102
References 105
9 Reliability of Electron Devices, Interconnects and Circuits 107
Anthony S. Oates, Richard C. Blish, Gennadi Bersuker and Lu Kasprzak
9.1 Introduction and Background 107
9.2 Device Reliability Issues 109
9.3 Circuit-Level Reliability Issues 114
9.4 Microscopic Approaches to Assuring Reliability of ICs 117
References 117
10 Semiconductor Manufacturing 121
Rajendra Singh, Luigi Colombo, Klaus Schuegraf, Robert Doering and Alain Diebold
10.1 Introduction 121
10.2 Substrates 122
10.3 Lithography and Etching 122
10.4 Front-End Processing 124
10.5 Back-End Processing 125
10.6 Process Control 128
10.7 Assembly and Test 129
10.8 Future Directions 131
References 131
PART III APPLICATIONS BASED ON ELECTRON DEVICES
11 VLSI Technology and Circuits 135
Kaustav Banerjee and Shuji Ikeda
11.1 Introduction 135
11.2 MOSFET Scaling Trends 136
11.3 Low-Power and High-Speed Logic Design 137
11.4 Scaling Driven Technology Enhancements 139
11.5 Ultra-Low Voltage Transistors 144
11.6 Interconnects 144
11.7 Memory Design 148
11.8 System Integration 150
References 152
12 Mixed-Signal Technologies and Integrated Circuits 157
Bin Zhao and James A. Hutchby
12.1 Introduction 157
12.2 Analog/Mixed-Signal Technologies in Scaled CMOS 159
12.3 Data Converter ICs 161
12.4 Mixed-Signal Circuits for Low Power Displays 164
12.5 Image Sensor Technologies and Circuits 166
References 168
13 Memory Technologies 171
Stephen Parke, Kristy A. Campbell and Chandra Mouli
13.1 Semiconductor Memory History 171
13.2
Preface xiii
Contributors xvii
Acknowledgments xix
Introduction: Historic Timeline xxi
PART I BASIC ELECTRON DEVICES
1 Bipolar Transistors 3
John D. Cressler and Katsuyoshi Washio
1.1 Motivation 3
1.2 The pn Junction and its Electronic Applications 5
1.3 The Bipolar Junction Transistor and its Electronic Applications 10
1.4 Optimization of Bipolar Transistors 15
1.5 Silicon-Germanium Heterojunction Bipolar Transistors 17
References 19
2 MOSFETs 21
Hiroshi Iwai, Simon Min Sze, Yuan Taur and Hei Wong
2.1 Introduction 21
2.2 MOSFET Basics 21
2.3 The Evolution of MOSFETs 27
2.4 Closing Remarks 31
References 31
3 Memory Devices 37
Kinam Kim and Dong Jin Jung
3.1 Introduction 37
3.2 Volatile Memories 39
3.3 Non-Volatile Memories 41
3.4 Future Perspectives of MOS Memories 43
3.5 Closing Remarks 45
References 46
4 Passive Components 49
Joachim N. Burghartz and Colin C. McAndrew
4.1 Discrete and Integrated Passive Components 49
4.2 Application in Analog ICs and DRAM 52
4.3 The Planar Spiral Inductor-A Case Study 54
4.4 Parasitics in Integrated Circuits 57
References 57
5 Emerging Devices 59
Supriyo Bandyopadhyay, Marc Cahay and Avik W. Ghosh
5.1 Non-Charge-Based Switching 59
5.2 Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics 63
5.3 Closing Remarks 66
References 67
PART II ASPECTS OF DEVICE AND IC MANUFACTURING
6 Electronic Materials 71
James C. Sturm, Ken Rim, James S. Harris and Chung-Chih Wu
6.1 Introduction 71
6.2 Silicon Device Technology 71
6.3 Compound Semiconductor Devices 75
6.4 Electronic Displays 79
6.5 Closing Remarks 82
References 83
7 Compact Modeling 85
Colin C. McAndrew and Laurence W. Nagel
7.1 The Role of Compact Models 85
7.2 Bipolar Transistor Compact Modeling 87
7.3 MOS Transistor Compact Modeling 89
7.4 Compact Modeling of Passive Components 92
7.5 Benchmarking and Implementation 94
References 94
8 Technology Computer Aided Design 97
David Esseni, Christoph Jungemann, J urgen Lorenz, Pierpaolo Palestri, Enrico Sangiorgi and Luca Selmi
8.1 Introduction 97
8.2 Drift-Diffusion Model 98
8.3 Microscopic Transport Models 100
8.4 Quantum Transport Models 101
8.5 Process and Equipment Simulation 102
References 105
9 Reliability of Electron Devices, Interconnects and Circuits 107
Anthony S. Oates, Richard C. Blish, Gennadi Bersuker and Lu Kasprzak
9.1 Introduction and Background 107
9.2 Device Reliability Issues 109
9.3 Circuit-Level Reliability Issues 114
9.4 Microscopic Approaches to Assuring Reliability of ICs 117
References 117
10 Semiconductor Manufacturing 121
Rajendra Singh, Luigi Colombo, Klaus Schuegraf, Robert Doering and Alain Diebold
10.1 Introduction 121
10.2 Substrates 122
10.3 Lithography and Etching 122
10.4 Front-End Processing 124
10.5 Back-End Processing 125
10.6 Process Control 128
10.7 Assembly and Test 129
10.8 Future Directions 131
References 131
PART III APPLICATIONS BASED ON ELECTRON DEVICES
11 VLSI Technology and Circuits 135
Kaustav Banerjee and Shuji Ikeda
11.1 Introduction 135
11.2 MOSFET Scaling Trends 136
11.3 Low-Power and High-Speed Logic Design 137
11.4 Scaling Driven Technology Enhancements 139
11.5 Ultra-Low Voltage Transistors 144
11.6 Interconnects 144
11.7 Memory Design 148
11.8 System Integration 150
References 152
12 Mixed-Signal Technologies and Integrated Circuits 157
Bin Zhao and James A. Hutchby
12.1 Introduction 157
12.2 Analog/Mixed-Signal Technologies in Scaled CMOS 159
12.3 Data Converter ICs 161
12.4 Mixed-Signal Circuits for Low Power Displays 164
12.5 Image Sensor Technologies and Circuits 166
References 168
13 Memory Technologies 171
Stephen Parke, Kristy A. Campbell and Chandra Mouli
13.1 Semiconductor Memory History 171
13.2