Molecular Beam Epitaxy

Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.

MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.

• Condenses fundamental science of MBE into a modern reference, speeding up literature review
• Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
• Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects
2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future
3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy
4. Droplet Epitaxy of Nanostructures
5. Self-assembled Quantum Dots
6. Migration Enhanced Epitaxy of Low Dimensional Structures
7. Surfactant-modified Epitaxy
8. MBE Growth of High Mobility 2DEG
9. MBE of GaAsBi
10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys
11. MBE of Dilute Nitride Optoelectronic Devices
12. The Effects of Antimony During MBE Growth
13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications
14. In-rich InGaN
15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices
16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors
17. MBE of Semiconducting Oxides
18. ZnO Materials and Devices grown by MBE
19. MBE of Complex Oxides
20. Epitaxial Systems Combining Oxides and Semiconductors
21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor
22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic
23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials
24. MBE of Semimagnetic Quantum Dots
25. MBE Growth of Graphene
26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers
27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators
28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth
29. MBE of II-VI Lasers
30. MBE Growth of Terahertz Quantum Cascade Lasers
31. MBE as a Mass Production Technique
32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs
33. Mass Production of Sensors Grown by MBE